Wu, Bing-RueyBing-RueyWuLin, Ching-FuhChing-FuhLinLaih, Lih-WenLih-WenLaihShih, Tien-TsorngTien-TsorngShih2009-03-182018-07-062009-03-182018-07-0620010277786Xhttp://ntur.lib.ntu.edu.tw//handle/246246/145922http://ntur.lib.ntu.edu.tw/bitstream/246246/145922/1/30.pdfhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0034875124&doi=10.1117%2f12.428027&partnerID=40&md5=93dfc1b964b67051a4eb5efac9f75f5bExtremely broadband emission is obtained from superluminescent diodes (SLDs)/semiconductor laser amplifiers (SLAs) with nonidentical quantum wells made of InGaAsP/InP materials. Two opposite sequences of nonidentical multiple quantum wells (MQWs), consisting of three In0.67Ga0.33As0.72P0.28 quantum wells (QWs) and two In0.53Ga0.47As QWs, are designed, fabricated, and measured. Nonuniform carrier distribution inside MQWs is further verified experimentally. The sequence of those wells is shown to have a significant influence on the emission spectra, indicating that stacking nonidentical MQWs for bandwidth broadening is not intuitively straightforward. With the three In0.67Ga0.33As0.72P0.28 quantum wells near the n-cladding layer and two In0.53Ga0.47AS quantum wells near the p-cladding layer, all bounded by In0.86Ga0.14As0.3P0.7 barriers, the emission spectrum of the fabricated SLDs/SLAs could cover from less than 1.3 μm to over 1.55 μm. The spectral width is near 300 nm.application/pdf301333 bytesapplication/pdfen-USBroadband emission; Nonidentical multiple quantum wells; Nonuniform carrier distribution; Superluminescent diodeAmplifiers (electronic); Bandwidth; Cladding (coating); Semiconducting indium compounds; Semiconductor diodes; Semiconductor lasers; Semiconductor quantum wells; Spectrum analysis; Bradband emission; Semiconductor laser amplifiers (SLA); Superluminescent diodes; Luminescent devicesjournal article10.1117/12.4280272-s2.0-0034875124http://ntur.lib.ntu.edu.tw/bitstream/246246/145922/1/30.pdf