Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures

CHIH-CHUNG YANGFeng, S.-W.S.-W.FengCheng, Y.-C.Y.-C.ChengYang, C.C.C.C.YangTsai, C.-Y.C.-Y.TsaiLin, Y.-S.Y.-S.LinHsu, C.C.HsuMa, K.-J.K.-J.MaChyi, J.-I.J.-I.ChyiCHIH-CHUNG YANG2018-09-102018-09-102001http://www.scopus.com/inward/record.url?eid=2-s2.0-0035684818&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/292591Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structuresconference paper