PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and Highly Compressive ILD- SiNx Stressing Layer

Liao, Wen-ShiangWen-ShiangLiaoLiaw, Yue-GieYue-GieLiawTang, Mao-ChyuanMao-ChyuanTangChen, Kun-MingKun-MingChenHuang, Sheng-YiSheng-YiHuangPeng, C.-Y.C.-Y.PengLiu, Chee WeeChee WeeLiu2009-03-252018-07-062009-03-252018-07-062008http://ntur.lib.ntu.edu.tw//handle/246246/148257application/pdf362641 bytesapplication/pdfen-USPMOS Hole Mobility Enhancement Through SiGe Conductive Channel and Highly Compressive ILD- SiNx Stressing Layerjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/148257/1/86.pdf