Chang, S.-Z.S.-Z.ChangChang, T.-C.T.-C.ChangSI-CHEN LEE2020-06-112020-06-11199601694332https://scholars.lib.ntu.edu.tw/handle/123456789/498726https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030562519&doi=10.1016%2f0169-4332%2895%2900205-7&partnerID=40&md5=cc62ea2dba1b90a205aa89de87911fcaThe use of island formation during the epitaxy of In x Ga 1-x As on GaAs can be applied to the in situ formation of quantum dots. Adjusting the alloy composition toward a larger degree of cation disorder (Ga and In intermixing) can decrease the island size and improve the island uniformity simultaneously. Under the same deposition conditions with a thickness of 15 monolayers, the dot size can be tuned from 125 × 100 to 30 × 28 nm 2 in lateral dimensions as the In composition changes from 1 to 0.5. Among all conditions, In 0.5 Ga 0.5 As dots show a high density of 5 × 10 10 cm -2 and exhibit the best uniformity. These small-sized and dislocation-free islands are of interest for the formation of high-quality quantum dots.Carrier concentration; Deposition; Epitaxial growth; Monolayers; Semiconducting gallium arsenide; Semiconducting indium; Semiconducting indium compounds; Surface structure; Cation disorder; Island formation; Island size; Island uniformity; Semiconductor quantum dotsjournal article10.1016/0169-4332(95)00205-72-s2.0-0030562519https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030562519&doi=10.1016%2f0169-4332%2895%2900205-7&partnerID=40&md5=cc62ea2dba1b90a205aa89de87911fca