Influence of neighboring coupling on metal-insulator-semiconductor (MIS) deep-depletion tunneling current via Schottky barrier height modulation mechanism

M.H.YangJ.G.HwuJENN-GWO HWU2019-10-312019-10-312017218979https://scholars.lib.ntu.edu.tw/handle/123456789/429132Influence of neighboring coupling on metal-insulator-semiconductor (MIS) deep-depletion tunneling current via Schottky barrier height modulation mechanismjournal article10.1063/1.49818912-s2.0-85018657222