2014-08-012024-05-17https://scholars.lib.ntu.edu.tw/handle/123456789/686182摘要：本計畫將開發適用於E頻段的發射器與相關關鍵元組件電路技術，並進一步與其他子計畫所開發之相關元組件結合為收發系統模組。實現的方法是利用90奈米互補金氧半導體積體電路製程技術，晶片製作將透過國家實驗研究院晶片系統設計中心送至代工廠。 在三年計畫執行期間，將針對系統與電路架構作模擬與分析，並將積體電路實現與整合系統。第一年期間將針對進行系統與關鍵元組件的規格確認，並進行關鍵元組件的電路設計與佈局。第二年期間將進行關鍵元組件的量測，根據量測結果進行發射器的整合設計。第三年期間將進行發射器的量測，並提供完成的電路晶片給總計畫進行收發模組整合測試。 <br> Abstract: This project proposes to develop the transmitter and relative key components for E-band applications. The transmitter will be integrated with the components developed by the other sub-project to complete an E-band transceiver system module. The chip will be fabricated by 90-nm CMOS process through Chip Implementation Center (CIC). In this three-year project, the system/circuit analysis and simulation will be performed, and the transmitter and relative key components will be implemented and integrated. The specifications for the transmitter and key components will be confirmed, and the key components will be designed in the first year. For the second, the chips for the key components will be measured. According the testing results, the integrated transmitter will be designed and implemented. The transmitter will be measured and verified in the third year. Also the transmitter will be integrated with the components developed by other sub-projects to complete an E-band transmitter system module.E頻段發射器互補式金氧半導體功率放大器IQ調變器單晶微波積體電路E-bandtransmitterCMOSpower amplifierIQ modulatorMMIC