GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al<inf>2</inf>O<inf>3</inf> as a template followed by atomic layer deposition growth

Chang, Y.H.Y.H.ChangChiu, H.C.H.C.ChiuChang, W.H.W.H.ChangKwo, J.J.KwoTsai, C.C.C.C.TsaiHong, J.M.J.M.HongMINGHWEI HONG2019-12-272019-12-272009https://scholars.lib.ntu.edu.tw/handle/123456789/443403GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al<inf>2</inf>O<inf>3</inf> as a template followed by atomic layer deposition growthjournal article10.1016/j.jcrysgro.2008.11.0112-s2.0-63349089776https://www.scopus.com/inward/record.uri?eid=2-s2.0-63349089776&doi=10.1016%2fj.jcrysgro.2008.11.011&partnerID=40&md5=c403d2824bca884aa4becaaa9ae867ab