Correlation of the growth rate for selective epitaxial growth of silicon and oxide thickness and oxide coverage in a reduced pressure chemical vapor deposition pancake reactor

Lee, K.-Y.K.-Y.LeeKUNG-YEN LEE2018-09-102018-09-102008http://www.scopus.com/inward/record.url?eid=2-s2.0-53349129606&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/337446Correlation of the growth rate for selective epitaxial growth of silicon and oxide thickness and oxide coverage in a reduced pressure chemical vapor deposition pancake reactorjournal article10.1116/1.2976567