CHING-FUH LINWu, B.-R.B.-R.WuLaih, L.-W.L.-W.LaihShih, T.-T.T.-T.Shih2018-09-102018-09-10200101469592http://www.scopus.com/inward/record.url?eid=2-s2.0-0000471401&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/293487https://www.scopus.com/inward/record.uri?eid=2-s2.0-0000471401&doi=10.1364%2fOL.26.001099&partnerID=40&md5=4a6cbf4e3d2ff4ecf416f33b809cb170Extremely broadband emission is obtained from semiconductor optical amplifiers-superluminescent diodes with nonidentical quantum wells made of InGaAsP/InP materials. The well sequence is experimentally shown to have a significant influence on the emission spectra. With the three In0.67Ga0.33As0.72P0.28 quantum wells near the n-cladding layer and the two In0.53Ga0.47As quantum wells near the p-cladding layer, all bounded by In0.86Ga0.14As0.3P0.7 barriers, the emission spectrum could cover from less than 1.3 to nearly 1.55 μm, and the FWHM could be near 300 nm. © 2001 Optical Society of America.Superluminescent diodes; Electron transport properties; Light emission; Optical communication; Semiconducting indium gallium arsenide; Semiconductor quantum wells; Light amplifiersjournal article2-s2.0-0000471401