Integration of a (–Cu–S–) n plane in a metal–organic framework affords high electrical conductivity

Pathak, A.A.PathakShen, J.-W.J.-W.ShenUsman, M.M.UsmanWei, L.-F.L.-F.WeiMendiratta, S.S.MendirattaChang, Y.-S.Y.-S.ChangSainbileg, B.B.SainbilegNgue, C.-M.C.-M.NgueChen, R.-S.R.-S.ChenHayashi, M.M.HayashiLuo, T.-T.T.-T.LuoChen, F.-R.F.-R.ChenChen, K.-H.K.-H.ChenTseng, T.-W.T.-W.TsengChen, L.-C.L.-C.Chen2020-04-012020-04-012019https://scholars.lib.ntu.edu.tw/handle/123456789/482744Integration of a (–Cu–S–) n plane in a metal–organic framework affords high electrical conductivityjournal article10.1038/s41467-019-09682-0