Chiu, Y.S.Y.S.ChiuYa, M.H.M.H.YaSu, W.S.W.S.SuChen, T.T.T.T.ChenHAO-HSIUNG LINYANG-FANG CHEN2018-09-102018-09-102002http://www.scopus.com/inward/record.url?eid=2-s2.0-0037164857&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/296542The anisotropic properties of type-II GaAs/GaAsSb heterostructures were studied using photoluminescence (PL) and photoconductivity (PC). It was demonstrated that the polarization does not depend on the excitation intensity as well as temperature, which excludes any extrinsic mechanisms related to the in-plane anisotropy. The observed polarized optical properties of GaAsSb/GaAs multiple quantum wells were attributed to the orientation of the inherent chemical bonds at heterointerfaces.Anisotropy; Chemical bonds; Heterojunctions; Photoconductivity; Photoluminescence; Polarization; Semiconducting gallium arsenide; Giant polarized photoluminescence; Semiconductor quantum wellsjournal article10.1063/1.15321082-s2.0-0037164857