國立臺灣大學電機工程學系暨研究所呂學士2006-07-252018-07-062006-07-252018-07-062004-07-31http://ntur.lib.ntu.edu.tw//handle/246246/8004本計劃中，已實現以磷化銦鎵/砷化鎵 異質接面雙極電晶體製作之匹配良好的寬 頻放大器，多迴授路徑技術亦被用來同時 達成阻抗匹配及頻寬增加。此外，從電路 的電壓增益公式中之極點位置，我們發展 出一種方法，可用來決定輸入及輸出返回 損失(或S11/S22)的頻率響應。實驗結果發 現，此電路具有16dB 的小訊號增益及 11.6GHz 的3dB 頻寬，且在這頻寬之內， 輸入和輸出返回損失皆小於-10dB，這些結 果和我們用公式推導出的電壓增益，轉導 增益，頻寬及輸出入阻抗都很吻合，並且 也符合此計畫所要求的規格。此外，針對 此電路的過阻尼現象，我們也在射極加上 電容來克服。In this project, the realization of matched impedance wideband amplifiers fabricated by InGaP/GaAs hetero-junction bipolar transistor (HBTs) process is reported. The technique of multiple feedback loops was used to achieve terminal impedance matching and wide bandwidth at the same time. A general method for the determination of frequency responses of input/output return losses (or S11/S22) from the poles of voltage gain was also proposed. The experimental results showed that a small signal gain of 16dB and a 3-dB bandwidth of 11.6GHz with in-band input/output return loss less than –10dB were obtained. These values agreed well with those predicted from the analytic expressions that we derived for voltage gain, transimpedance gain, bandwidth, input and output impedances. Also these results are suited for the specification of this project. The intrinsic over-damped characteristic of this amplifier was proved and emitter capacitive peaking was used to remedy this problem. The tradeoff between the input impedance matching and bandwidth was also found.application/pdf425997 bytesapplication/pdfzh-TW國立臺灣大學電機工程學系暨研究所寬頻放大器多路徑迴授磷化 銦鎵/砷化鎵wideband amplifiermultiple feedbackInGaP/GaAsreporthttp://ntur.lib.ntu.edu.tw/bitstream/246246/8004/1/922219E002008.pdf