Graduate Inst. of Electro-Optical Eng., National Taiwan Univ.Yeh, D.-M.D.-M.YehLu, C.-F.C.-F.LuHuang, C.-F.C.-F.HuangTang, T.-Y.T.-Y.TangChen, H.-S.H.-S.ChenJIAN-JANG HUANGCHIH-CHUNG YANGChuang, C.-M.C.-M.ChuangWEI-FANG SU2018-09-102018-09-10200510928081http://www.scopus.com/inward/record.url?eid=2-s2.0-33751349739&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/319092https://www.scopus.com/inward/record.uri?eid=2-s2.0-33751349739&doi=10.1109%2fLEOS.2005.1547976&partnerID=40&md5=2784695159bc0a41b8dd188c580c3292By coating CdSe nano-crystals on an InGaN/GaN quantum well structure, polychromatic LEDs emitting blue and red lights have been implemented. The blue photons emitted by the quantum well structure are absorbed by the CdSe nano-crystals for emitting red light. By fabricating holes on the quantum well structure for filling up the nano-crystal solution, the red emission efficiency can be improved. © 2005 IEEE.application/pdf102969 bytesapplication/pdf[SDGs]SDG7Gallium compounds; Nanostructured materials; Semiconducting indium compounds; Semiconductor quantum wells; Nanocrystal solution; Quantum well structure; Red emission efficiency; Light emitting diodesLight-emitting devices fabricated with cdse nano-crystals coated on an InGaN/GaN quantum-well structure for polychromatic generationconference paper10.1109/LEOS.2005.15479762-s2.0-33751349739