A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivation

M. H.LiaoM. H. YuT. C. HuangL. T. WangT. L. LeeS. M. JangH. C.Cheng2019-03-112019-03-112012https://scholars.lib.ntu.edu.tw/handle/123456789/404521A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivationjournal article