Function of the parasitic bipolar transistor in the 40 nm PD SOI NMOS device considering the floating body effect

C. H. ChenJ. B. KuoD. ChenC. S. YehJAMES-B KUO2018-09-102018-09-102012-04http://scholars.lib.ntu.edu.tw/handle/123456789/373969Function of the parasitic bipolar transistor in the 40 nm PD SOI NMOS device considering the floating body effectjournal article10.1016/j.sse.2011.11.013