Al <inf>x</inf>Ga <inf>1-x</inf>) <inf>0.5</inf>In <inf>0.5</inf>P /In <inf>0.15</inf>Ga <inf>0.85</inf>As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applications

Yang, S.-C.S.-C.YangChiu, H.-C.H.-C.ChiuChan, Y.-J.Y.-J.ChanLin, H.-H.H.-H.LinKuo, J.-M.J.-M.KuoHAO-HSIUNG LIN2020-06-112020-06-112001https://scholars.lib.ntu.edu.tw/handle/123456789/500433Al <inf>x</inf>Ga <inf>1-x</inf>) <inf>0.5</inf>In <inf>0.5</inf>P /In <inf>0.15</inf>Ga <inf>0.85</inf>As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applicationsjournal article10.1109/16.9747262-s2.0-0035694431https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035694431&doi=10.1109%2f16.974726&partnerID=40&md5=fbaef79167df0e5e95ac76095ca33413