25 Gb/s NRZ transmission at 85°C using a high-speed 940 nm AlGaAs oxide-confined VCSEL grown on a Ge substrate

Yang, Yun ChengYun ChengYangWan, ZeyuZeyuWanHsu, Guei TingGuei TingHsuChiu, Chih ChuanChih ChuanChiuChen, Wei HsinWei HsinChenFeifel, MarkusMarkusFeifelLackner, DavidDavidLacknerXia, Guangrui MaggieGuangrui MaggieXiaCHAO-HSIN WU2024-02-292024-02-292024-02-0101469592https://scholars.lib.ntu.edu.tw/handle/123456789/640012In this Letter, we present a comprehensive analysis of the high-speed performance of 940 nm oxide-confined AlGaAs vertical-cavity surface-emitting lasers (VCSELs) grown on Ge substrates. Our demonstration reveals a pronounced superiority of Ge-based VCSELs in terms of thermal stability. The presented Ge-VCSEL has a maximum modulation bandwidth of 16.1 GHz and successfully realizes a 25 Gb/s NRZ transmission at 85 ◦C. The experimental results underscore the significance and potential of Ge-VCSELs for applications requiring robust performance in high-temperature environments, laying the cornerstone for the future development of VCSEL devices.en25 Gb/s NRZ transmission at 85°C using a high-speed 940 nm AlGaAs oxide-confined VCSEL grown on a Ge substratejournal article10.1364/OL.509988383000652-s2.0-85183984324https://api.elsevier.com/content/abstract/scopus_id/85183984324