Wu, Pei WenPei WenWuYei, Jia WeiJia WeiYeiFu, Zi HaoZi HaoFuChang, Yu TengYu TengChangKUN-YOU LIN2024-04-032024-04-032023-01-019781665494182https://scholars.lib.ntu.edu.tw/handle/123456789/641739This paper presents a millimeter-wave (mmW) wideband low noise amplifier (LNA) fabricated in 0.15-μ m GaAs pHEMT process. The LC π-type input matching network and gain-distributed technique are utilized to achieve the wideband low noise and high-gain performance. The proposed L N A achieves a 3-dB bandwidth (BW) of 25-43 GHz, with a small-signal peak gain of 24.8 dB. The lowest noise figure (NF) is 2.1 dB, and the average NF is 2.7 dB. The dc power consumption is only 79 mW under 2-V supplied voltage. This LNA demonstrates wide bandwidth, low noise, and high gain under a low dc power consumption.GaAs pHEMT | low noise amplifier (LNA) | millimeter-wave | wideband amplifier[SDGs]SDG7conference paper10.1109/APMC57107.2023.104397472-s2.0-85186685105https://api.elsevier.com/content/abstract/scopus_id/85186685105