A Single InN Nanopillar Photodetector with Extended Infrared Response Grown by MOCVD

Hsu, Lung HsingLung HsingHsuKuo, Chien TingChien TingKuoCheng, Yuh JenYuh JenChengChen, Kuan ChaoKuan ChaoChenKuo, Hao ChungHao ChungKuoLin, Shih YenShih YenLinCHIEN-CHUNG LIN2023-06-052023-06-052016-01-019781557528209https://scholars.lib.ntu.edu.tw/handle/123456789/631789An extended infrared photoresponse is observed in a high quality InN pillar/p-GaN photodetector with self-assembly epitaxy grown by LP-MOCVD. The IR portion photocurrent as high as 14.2% can be measured via AM1.5G solar simulated spectra.A Single InN Nanopillar Photodetector with Extended Infrared Response Grown by MOCVDconference paper2-s2.0-85136545768https://api.elsevier.com/content/abstract/scopus_id/85136545768