High-Current-Gain Small-Offset-Voltage In0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistors Grown by Gas Source Molecular Beam Epitaxy

Lu, S.S.S.S.LuWu, C.C.C.C.WuSHEY-SHI LU2018-09-102018-09-101992http://www.scopus.com/inward/record.url?eid=2-s2.0-0026916587&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/298344High-Current-Gain Small-Offset-Voltage In0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistors Grown by Gas Source Molecular Beam Epitaxyjournal article10.1109/55.192797