國立臺灣大學電子工程學研究所林浩雄2006-07-262018-07-102006-07-262018-07-102005-10-31http://ntur.lib.ntu.edu.tw//handle/246246/20041本計畫的目標在於研究三五族中紅外線半導體材料與元件的分子束磊晶成長與特性分 析。我們首先研究InAsSb/InAs 第二型多層量子井的分子磊晶成長，並分析其結構與光 學特性。藉由溫變光激螢光譜的分析，我們除了比較量子井的特性之外，並分析了 InAsSb/InAs 的能帶排列。我們發現這個合金的導電帶與價電帶都有彎曲效應，其彎曲 參數比為四比六。此外我們並應用此結構製作波長 ~ 4 μm 之多量子井PIN 發光二極 體。這種發光二極體適合於二氧化碳氣體偵測之用。為了更進一步改善元件中載子的侷 限，我們也研究成長與InAs 接近晶格匹配的InPSb。InPSb 材料具有0.64eV 的能隙，但 是位於混熔隙(miscibility gap)之中。我們發現進行接近晶格匹配的成長時，同調應變的 應變能可形成一個局部的亞穩態區，容許單相的磊晶成長。我們成功地完成InPSb 的成 長，並分析其結構與光學特性。這是首次應用分子束磊晶法成長接近InAs 晶格常數的 InPSb 磊晶層。We report detailed studies of the growth and characterization of InAsSb/InAs multiple quantum wells (MQWs) and InPSb alloy. The InAsSb/InAs MQW samples were grown by molecular beam epitaxy on InAs substrates with the Sb mole fraction ranging from 0.06 to 0.13. From 4K PL, we observed staggered type-II behaviors of the MQWs. By comparing the emission peak energies with a transition energy calculation, we found that both the conduction and valence bands of InAsSb alloy have bowing effect. Their bowing parameters are in the ratio of 4:6. For sample with Sb composition ~0.12, the emission band covers the absorption peak of CO2, and thus a PIN LED with InAsSb/InAs MQW was fabrication. Its emission wavelength is ~ 4 μm and is suitable for CO2 detector application. The growth of InPSb on InAs substrates was also investigated. InPSb has a band gap energy of 0.64eV, however, is located at a miscibility gap when it is nearly lattice-match to InAs. In this investigation, we found that the coherent strain energy can form a local meta stable region around the lattice-match composition. Therefore, by carefully optimizing the growth parameters, we successfully grew high quality InPSb bulk layers on InAs substrates. This is the first demonstration of MBE grown single phase InPSb bulk layers on InAs.application/pdf627056 bytesapplication/pdfzh-TW國立臺灣大學電子工程學研究所含銻三五族半導體分子束磊晶中紅外線光電元件砷化銦銻砷化銦多量子彎曲參數銻磷化銦混熔隙同調應變III-V-Sb semiconductormolecular beam epitaxyMid-Infrared optoelectronic devicesInAsInAsSbmultiple quantum wellbowing parameterInPSbmiscibility gapcoherent growthreporthttp://ntur.lib.ntu.edu.tw/bitstream/246246/20041/1/932215E002013.pdf