陳永芳臺灣大學：物理研究所林孝正Leen, Sheow-DzungSheow-DzungLeen2007-11-262018-06-282007-11-262018-06-282006http://ntur.lib.ntu.edu.tw//handle/246246/54611我們呈現簡單的方法用以提升電子束微影技術的解析度， 利用鄰近電子束曝光區域互相重疊而造成過度曝光。我們已利用聚甲基丙烯酸甲酯(PMMA)和量子點硒化鎘/硫化鋅(CdSe/ZnS)製作不同晶格常數的周期性陣列物質，非常有趣的是，我們發現當晶格常數等於光波長的半整數倍時，發光強度將會大幅度增益，這種獨特的現象，可以用柱子間的超輻射耦合來解釋。We present a simple approach to enhance the resolution of electron beam lithography, which is based on the overexposed region created by the overlap between the nearest neighbor of electron beam spots. As an illustration ,we have fabricated the periodic arrays with different lattice constants for the composite of polymethylmethacrylate (PMMA) and CdSe/ZnS core-shell quantum dots. Quite interestingly, it is found that the emission intensity can be greatly enhanced when the lattice constant is equal to an integer multiple half wavelength of the radiation. This peculiar behavior is explained in terms of the superradiant coupling between the pillars.1. Introduction ........................................ 1 2. Theoretical of Background of Photonic Crystals ...... 3 2.1 Introduction ....................................... 3 2.2 Photonic Band Gap .................................. 4 2.3 Eigenvalue Problems Derive From Electromagnetism ... 6 2.4 Real Eigenvalues of the Harmonic Modes ............ 10 2.5 Bloch Theorem in Two Dimensional Photonic Crystals 12 2.6 Calculate Photonic Crystals by Computer ........... 13 3. Experiment ......................................... 15 3.1 Lithography ....................................... 15 3.1.1 Current Lithography Situation .................. 15 3.1.2 Lithographic Process ............................ 17 3.1.3 Two Types of Photoresists ....................... 19 3.2 Electron Beam Lithography ......................... 20 3.2.1 Pattern Generator ............................... 21 3.2.2 Polymethyl Methacrylate ......................... 24 3.3 Photoluminescence ................................. 25 3.3.1 Light Emission .................................. 25 3.3.2 Photoluminescence Apparatus ..................... 28 3.3.3 Micro Photoluminescence ......................... 30 4 . Results and Discussion ............................ 31 4.1. Sample Preparation ............................... 31 4.1.1. Indium Tin Oxide Glass ......................... 31 4.1.2. CdSe/ZnS core-shell Quantum Dots ............... 31 4.1.3. PMMA/QDs thin film ............................. 32 4.1.4. Development by Electron Beam Lithography ....... 32 4.2. Fabrication of air columns by E-beam Lithography . 33 4.3. Crosslinked PMMA Pillar Arrays ................... 36 4.3.1. Introduction ................................... 36 4.3.2. Parameter ...................................... 36 4.3.3. micro-photoluminescence spectrum .............. 44 4.4. Nano Particle pairs .............................. 47 4.5. Nano Au Donuts ................................... 48 5. Conclusion ......................................... 497211806 bytesapplication/pdfen-US聚甲基丙烯酸甲酯硒化鎘/硫化鋅量子點過度曝光PMMACdSe/ZnSCrosslinkedthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/54611/1/ntu-95-P93222003-1.pdf