Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-庥 Y <inf>2</inf> O <inf>3</inf> on GaAs(001)-4 ? 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy

Cheng, C.-P.C.-P.ChengChen, W.-S.W.-S.ChenCheng, Y.-T.Y.-T.ChengWan, H.-W.H.-W.WanYang, C.-Y.C.-Y.YangPi, T.-W.T.-W.PiKwo, J.J.KwoMINGHWEI HONG2019-12-272019-12-272018https://scholars.lib.ntu.edu.tw/handle/123456789/443302Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-庥 Y <inf>2</inf> O <inf>3</inf> on GaAs(001)-4 ? 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopyjournal article10.1021/acsomega.7b015642-s2.0-85053126076https://www.scopus.com/inward/record.uri?eid=2-s2.0-85053126076&doi=10.1021%2facsomega.7b01564&partnerID=40&md5=207e600954cff5c41566f8950fdeb52e