Alsuraisry, H.H.AlsuraisryChang, T.-Y.T.-Y.ChangTsai, J.-H.J.-H.TsaiTIAN-WEI HUANG2020-06-112020-06-112017https://scholars.lib.ntu.edu.tw/handle/123456789/499583This paper presents a 38 GHz power amplifier for the fifth generation mobile networks (5G) using 0.15 μm enhancement mode (E-mode) GaAs pHEMT technology. This proposed 3-stage PA consists of two driver stages, and one power stage with combining four power devices. It has 24.7 dB small signal gain and can achieve a saturated output power (P sat ) of 28.1dBm and 1-dB compression output power (OP1dB) of 27.1 dBm with peak power-added efficiency (PAE) of 28% under 4V supply voltage. This chip occupies an area of 3.75 mm 2 .[SDGs]SDG7conference paper10.1109/GSMM.2017.79703282-s2.0-85027133419https://www.scopus.com/inward/record.uri?eid=2-s2.0-85027133419&doi=10.1109%2fGSMM.2017.7970328&partnerID=40&md5=db71bf805013de8c86cb500e471ba45d