Influence of residual ions and gases at Si/SiO2 interface in ultra-thin gate oxide

Chen, T.-Y.T.-Y.ChenLu, H.-W.H.-W.LuHwu, J.-G.J.-G.HwuJENN-GWO HWU2018-09-102018-09-102011http://www.scopus.com/inward/record.url?eid=2-s2.0-79960859574&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/363033Influence of residual ions and gases at Si/SiO2 interface in ultra-thin gate oxideconference paper10.1149/1.3567751