Chang C.-K.Kataria S.Kuo C.-C.Ganguly A.Wang B.-Y.Hwang J.-Y.Huang K.-J.Yang W.-H.Wang S.-B.Chuang C.-H.Chen M.Huang C.-I.Pong W.-F.Song K.-J.Chang S.-J.Guo J.-H.Tai Y.Tsujimoto M.Isoda S.Chen C.-W.Chen L.-C.CHUN-WEI CHENCHING-I HUANGChen, L.-C.L.-C.Chen2019-11-272019-11-27201319360851https://www.scopus.com/inward/record.uri?eid=2-s2.0-84874443593&doi=10.1021%2fnn3049158&partnerID=40&md5=a809d79fc2cf288a71aff75433546721https://scholars.lib.ntu.edu.tw/handle/123456789/432821Band gap engineering of chemical vapor deposited graphene by in situ BN dopingjournal article10.1021/nn30491582-s2.0-84874443593