Tsai, H.-K.H.-K.TsaiSI-CHEN LEE2020-06-112020-06-11198900381101https://scholars.lib.ntu.edu.tw/handle/123456789/498724https://www.scopus.com/inward/record.uri?eid=2-s2.0-0024734228&doi=10.1016%2f0038-1101%2889%2990005-1&partnerID=40&md5=1c0cbdff045b08ba9a8aa12aa78e1335The use of capacitance-voltage measurement to probe the continuous gap state distribution of hydrogenated amorphous silicon is reconsidered. Since the capacitance is measured by a small a.c. voltage, whereas the data is plotted against d.c. voltage, care must be taken in extracting the gap state density from the slope of the capacitance-voltage curve. It is found that under large reverse bias, the 1/C2-V curve of an a-Si:H p+-n junction shows a linear relation, similar to a crystal junction, and that the density obtained is the total gap state charge density. © 1989.Semiconducting Silicon--Amorphous; Crystal Junction; Gap State Density; Hydrogenated Amorphous Silicon; Silicon p-n Junction; Semiconductor Devicesjournal article10.1016/0038-1101(89)90005-12-s2.0-0024734228