JENN-GWO HWU2018-09-102018-09-101985https://www.scopus.com/inward/record.uri?eid=2-s2.0-0021397771&doi=10.1016%2f0040-6090%2885%2990389-X&partnerID=40&md5=f612b92e4455d8ff301093794232ea2chttp://scholars.lib.ntu.edu.tw/handle/123456789/314480The trap charge at the Si(P)SiO2 interface was studied using the bias-temperature aging technique. The formation of the interface trap charge at the SiSiO2 interface is attributed to the mobile ion inside the oxide. The peak in the interface trap density distribution can be produced or eliminated by bias-temperature treatment and appears to be dependent on the preparation conditions. © 1985.CAPACITORS; ELECTRIC FIELDS; CAPACITANCE-VOLTAGE CURVES; ENERGY GAPS; INTERFACE TRAP DENSITY; SEMICONDUCTOR DEVICES, MOSjournal article10.1016/0040-6090(85)90389-X2-s2.0-0021397771