Oxide roughness effect on tunneling current of MOS diodes

CHEE-WEE LIUHsu, B.-C.B.-C.HsuChen, K.-F.K.-F.ChenLai, C.-C.C.-C.LaiLee, S.W.S.W.LeeCHEE-WEE LIU2018-09-102018-09-102002http://www.scopus.com/inward/record.url?eid=2-s2.0-0037004303&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/298366Oxide roughness effect on tunneling current of MOS diodesjournal article10.1109/TED.2002.805229