Thin film transistors with electron mobility of 40 cm2V-1s-1 made from directly deposited intrinsic microcrystalline silicon

Cheng, I.-C.I.-C.ChengWagner, S.S.WagnerMulato, M.M.MulatoI-CHUN CHENG2018-09-102018-09-102000http://www.scopus.com/inward/record.url?eid=2-s2.0-0034431068&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/289896Thin film transistors with electron mobility of 40 cm2V-1s-1 made from directly deposited intrinsic microcrystalline siliconconference paper