Recombination mechanism of InGaN multiple quantum wells grown by metalorganic chemical vapor deposition

CHIH-CHUNG YANGFeng, Z.C.Z.C.FengLiu, W.W.LiuChua, S.J.S.J.ChuaChen, J.H.J.H.ChenYang, C.C.C.C.YangLu, W.W.LuCollins, W.E.W.E.CollinsCHIH-CHUNG YANG2018-09-102018-09-102005http://www.scopus.com/inward/record.url?eid=2-s2.0-27344446831&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/314809Recombination mechanism of InGaN multiple quantum wells grown by metalorganic chemical vapor depositionconference paper10.1002/pssc.200461496