CHING-FUH LINCHEE-WEE LIUMIIN-JANG CHENLee, M. H.M. H.LeeLin, I. C.I. C.Lin2009-03-252018-07-062009-03-252018-07-06200000218979http://ntur.lib.ntu.edu.tw//handle/246246/148149https://www.scopus.com/inward/record.uri?eid=2-s2.0-0001218210&doi=10.1063%2f1.373612&partnerID=40&md5=93a0ec24c3b897f438812dd756d2f9fbRoom-temperature electroluminescence corresponding to Si band gap energy from metal-oxide-semiconductor structures on both p-type and n-type Si is observed. With very thin oxide grown by rapid thermal oxidation, the metal-oxide-semiconductor structures behave like light emitting diodes. Luminescence is observed under forward bias even with a current density as low as 0.67 A/cm2. The physical reason for the electroluminescence is discussed and attributed to the localized wave function that leads to the spread of momentum. As a result, the spread momentum causes the electron-hole radiative recombination to occur relatively easily. © 2000 American Institute of Physics.application/pdf39729 bytesapplication/pdfen-USjournal article8793-87952-s2.0-0001218210http://ntur.lib.ntu.edu.tw/bitstream/246246/148149/1/11.pdf