Electron cyclotron resonance in strained Si and Si<inf>0.94</inf>Ge<inf>0.06</inf> channels on relaxed Si<inf>0.62</inf>Ge<inf>0.38</inf> buffers grown by rapid thermal chemical vapor deposition

CHEE-WEE LIULiu, C.W.C.W.LiuVenkataraman, V.V.VenkataramanCHEE-WEE LIU2018-09-102018-09-101996http://www.scopus.com/inward/record.url?eid=2-s2.0-0030382197&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/324173Electron cyclotron resonance in strained Si and Si<inf>0.94</inf>Ge<inf>0.06</inf> channels on relaxed Si<inf>0.62</inf>Ge<inf>0.38</inf> buffers grown by rapid thermal chemical vapor depositionconference paper