Rahaman S.ZChang Y.-JHsin Y.-CYang S.-YChen F.-MChen K.-MWang I.-JLee H.-HChen G.-LSu Y.-HShih C.-YChiu S.-CWei J.-HYen S.-CHuang K.-CChen C.-CChen M.-CSheu S.-SLo W.-CChang S.-ZSee Y.-CDeng D.-LCHIH-I WU2023-06-092023-06-092022https://www.scopus.com/inward/record.uri?eid=2-s2.0-85130463886&doi=10.1109%2fVLSI-TSA54299.2022.9771005&partnerID=40&md5=d07e71f7a7f6a00b2162cb0b66d5b244https://scholars.lib.ntu.edu.tw/handle/123456789/632149We demonstrate highly manufacturable, reliable, and energy-efficient SOT-MRAM by developing damage-free reactive-ion etching (RIE) recipes. The experimental results demonstrate that C-F Etch lowers the CoFeB/MgO interfacial anisotropy, partially destroys the magnetic moment of CoFeB, and the post-etch annealing further degrades the magnetic moment. On the other hand, N-H Etch hardly changes the stack magnetic property. The present process technology allows to etch uniformly stop on the thin heavy-metal (HM) layer and resulting in a low SOT-channel resistance <250O. A statistical full wafer-level study of the SOT switching properties such as TMR%, SOT-channel resistance, P2AP/AP2P voltages, and P/AP-state resistances has been explored. © 2022 IEEE.Cobalt compounds; Energy efficiency; Heavy metals; Iron compounds; Magnetic anisotropy; Magnetic recording; MRAM devices; Channel resistance; Damage-free; Energy efficient; Magnetic random access memory; Metal layer; Process Technologies; Reactive-ion etching; Spin orbits; Switching properties; Wafer level; Magnetic momentsconference paper10.1109/VLSI-TSA54299.2022.97710052-s2.0-85130463886