Chang, H.-Y.H.-Y.ChangMeng, C.-Y.C.-Y.MengTsai, M.-W.M.-W.TsaiYang, B.-C.B.-C.YangChuang, T.-H.T.-H.ChuangSI-CHEN LEE2020-06-112020-06-11200600189383https://scholars.lib.ntu.edu.tw/handle/123456789/498857https://www.scopus.com/inward/record.uri?eid=2-s2.0-33746621733&doi=10.1109%2fTED.2006.877873&partnerID=40&md5=7ee7fd6907ebc21e95ac0d3a1e399405Polysilicon films with regular-sized and large grains were fabricated by employing periodic metal (Cr-Al) pads as the heat sinks and with underlying silicon oxynitride (SiON) as the heat absorption layer. The poly-Si could grow to regular hexagonal grains after excimer laser annealing (ELA). The thin-film transistors (TFTs) fabricated by this method show uniform characteristics that are suitable for large-area applications. The TFT achieves a field-effect mobility of 270 cm2/V · s and an on-off current ratio exceeding 108. It is found that the TFT with the smaller channel width and length results in a better subthreshold swing because it contains fewer grain boundaries and, thus, fewer defects. After comparing the performance of TFTs using either double-metal Cr-Al or single-metal Al photonic-crystal pads, it is found that the Cr could efficiently impede the diffusion of Al into Si during ELA. © 2006 IEEE.Photonic crystal; Polycrystalline silicon; Thin-film transistor (TFT)Annealing; Defects; Grain boundaries; Heat sinks; Polysilicon; Semiconductor device manufacture; Heat absorption layer; Periodic metal pads; Photonic crystal; Silicon oxynitride (SiON); Thin film transistorsjournal article10.1109/TED.2006.8778732-s2.0-33746621733