Zero dipole formation at HfGdO/SiO2 interface by Hf/Gd dual-sputtered method

CHIH-I WUWang, J.-C.J.-C.WangChou, P.-C.P.-C.ChouLai, C.-S.C.-S.LaiLin, J.-Y.J.-Y.LinChang, W.-C.W.-C.ChangLu, H.-C.H.-C.LuWu, C.-I.C.-I.WuWang, P.-S.P.-S.WangCHIH-I WU2018-09-102018-09-102011http://www.scopus.com/inward/record.url?eid=2-s2.0-79953227024&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/365476Zero dipole formation at HfGdO/SiO2 interface by Hf/Gd dual-sputtered methodjournal article10.1149/1.3554738