I-CHUN CHENG2018-09-102018-09-102007https://www.scopus.com/inward/record.uri?eid=2-s2.0-47549114741&doi=10.1889%2f1.2759547&partnerID=40&md5=dd6fcfde3e0e2582163182b8b15e4fd9http://scholars.lib.ntu.edu.tw/handle/123456789/332099An active-matrix organic light-emitting diode (AMOLED) display driven by hydrogenated amorphous-silicon thin-film transistors (a-Si:H TFTs) on flexible, stainless-steel foil was demonstrated. The 2-TFT voltage-programmed pixel circuits were fabricated using a standard a-Si:H process at maximum temperature of 280°C in a bottom-gate staggered source-drain geometry. The 70-ppi monochrome display consists of (48 × 4) × 48 subpixels of 92 × 369 μm each, with an aperture ratio of 48%. The a-Si:H TFT pixel circuits drive top-emitting green electrophosphorescent OLEDs to a peak luminance of 2000 cd/m2. © Copyright 2007 Society for Information Display.a-Si:H; AMOLED; Electrophosphorescence; Flexible substrate; Stainless steel; Thin-film transistora-Si:H; AMOLED; Electrophosphorescence; Flexible substrate; Thin-film transistor; Amorphous silicon; Electromagnetic waves; Light emission; Light emitting diodes; Networks (circuits); Organic light emitting diodes (OLED); Phosphorescence; Pixels; Semiconducting organic compounds; Semiconducting silicon compounds; Silicon; Steel; Thin film devices; Thin film transistors; Stainless steeljournal article10.1889/1.27595472-s2.0-47549114741