T. T. Chen,T. T. ChenC. L. Cheng,C. L. ChengF. Y. Chang,F. Y. ChangC. T. Wu,C. T. WuC. H. Chen,C. H. ChenHAO-HSIUNG LINYANG-FANG CHEN2018-09-102018-09-102007-01https://www.scopus.com/inward/record.uri?eid=2-s2.0-33846376908&doi=10.1103%2fPhysRevB.75.033310&partnerID=40&md5=f661614e2ce0eadd530ae12ad74a9ef9The optical properties of type-II InAs Ga As0.7 Sb0.3 quantum dots (QDs) were investigated by photoluminescence (PL). It is found that the peak position of PL spectra exhibits a significant blueshift under a moderate excitation level. The observed blueshift can be well explained by the band bending effect due to the spatially separated photoexcited carriers in a type-II band alignment. We also found that the PL spectra exhibit a strong in-plane polarization with a polarization degree up to 24%. The observed optical anisotropy is attributed to the inherent property of the orientation of chemical bonds at InAs Ga As0.7 Sb0.3 heterointerfaces. © 2007 The American Physical Society.journal article10.1103/PhysRevB.75.0333102-s2.0-33846376908WOS:000243895400013