陳銘堯臺灣大學：物理研究所蔡玉珍2007-11-262018-06-282007-11-262018-06-282005http://ntur.lib.ntu.edu.tw//handle/246246/54563我們在使用催化劑化學氣相沈積法成長氧化鋅奈米線的過程中加入偏壓，比較在其他條件相同的情形下，電場對氧化鋅奈米線各項性質的影響。首先我們在氧化鋁(110)基台上鍍一層金膜，再將其與氧化鋅及碳粉的混合粉末一起放入高溫爐中加熱至900℃，過程中通以氬氣與氧氣、並控制電場的施加與否以得到不同的奈米線樣品。 我們將生長好的樣品先以電子顯微鏡觀察其長成的型態與結構尺度，用X射線繞射儀分析奈米線的結晶品質，最後再量測樣品的PL光譜，發現在生長過程裡加上偏壓的樣品，平均直徑較小、高度較高，順向性與結晶品質較好，發光性質也較佳。ZnO nanowires were synthesized by vapor transport process on sapphire(110) substrate at 900℃ with bias applied. After coated with a thin film of Au, the substrate was placed into the furnace together with the powder mixed by ZnO and graphite powder. During the growth, an airflow of oxygen and argon were maintained in the quartz tube. Nanowires with bias applied or not during the growth were investigated to find the influence of the electric field. Morphology and the scale of these nanowires were studied by scanning electron microscopy, structure properties and orientation were studied by X-ray diffraction, and the photoluminescence at different temperature were observed. The sample that grew in the electric field were more narrow in diameter, higher in length, and better aligned compared with the sample without electric field, and it also shows a better optical property revealed by the PL spectra.1. 簡介 1 1.1. 氧化鋅奈米線之研究 2 1.2. ＶＬＳ成長機制 5 1.3. 基台選擇 7 1.4. 電場 10 2. 實驗裝置與流程 11 2.1. 切割清洗基台 12 2.2. 鍍金 12 2.3. 藥品與樣品準備工作 14 2.4. 高溫爐裝置 15 3. 實驗結果與分析 16 3.1. 掃瞄式電子顯微鏡(scanning electron microscopy, SEM) 16 3.1.1. 基本原理 16 3.1.2. 金球俯視圖 19 3.1.3. 俯視圖 20 3.1.4. 45°側視圖 22 3.2. X光繞射分析（X-ray Diffraction） 23 3.2.1. 基本原理 23 3.2.2. 裝置簡介 26 3.2.3. X-ray th-2th繞射結果 28 3.2.4. High resolution rocking curve 29 3.3. 光激發螢光( Photoluminescence, PL ) 31 3.3.1. 基本原理 31 3.3.2. 氧化鋅的發光機制 32 3.3.3. 儀器架設與量測 34 3.3.4. PL光譜 36 4. 結論 39 5. 參考資料 401315003 bytesapplication/pdfen-US氧化鋅奈米線ZnOnanowiresthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/54563/1/ntu-94-R92222043-1.pdf