Wu, Yuh-RennYuh-RennWuFerguson, Ian T.Ian T.FergusonTaguchi, TsunemasaTsunemasaTaguchiYu, PeichenPeichenYuChiu, C. H.C. H.ChiuAshdown, Ian E.Ian E.AshdownPark, Seong-JuSeong-JuParkChang, Cheng-YuCheng-YuChangKuo, H. C.H. C.Kuo2010-09-272018-07-052010-09-272018-07-052008-080277786Xhttp://ntur.lib.ntu.edu.tw//handle/246246/205597https://www.scopus.com/inward/record.uri?eid=2-s2.0-55549135353&doi=10.1117%2f12.800658&partnerID=40&md5=7e4dcf7fde4e08f9034de1bec87d10f5We have made a GaN-based single nanopillar with a diameter of 300nm using the focused ion beam (FIB) technique. The micro-photoluminescence (μ-PL) from the embedded GaN/InGaN multi-quantum wells reveals a blue shift of 68.3 meV in energy. In order to explain the spectrum shift, we have developed a valence force field model to study the strain relaxation mechanism in a single GaN-based nanopillar structure. The strain distribution and strain induced polarization effect inside the multiple quantum wells is added to our self-consistent Poisson, drift-diffusion, and Schrodinger solver to study the spectrum shift of μ-PL.en-USGaN; InGaN; Nanopillar; Nanorod; Strain relaxation; Valence force field model[SDGs]SDG7Blue shifts; Emission spectrums; GaN; Gan/ingan; Induced polarizations; InGaN; Multiple quantum wells; Nanopillar; Nanopillar structures; Quantum wells; Spectrum shifts; Strain distributions; Strain relaxation mechanisms; Valence force field model; Valence force fields; Emission spectroscopy; Focused ion beams; Gallium alloys; Gallium nitride; Ion bombardment; Light emission; Luminescence; Poisson distribution; Semiconducting gallium; Semiconductor materials; Semiconductor quantum wires; Strain control; Strain relaxation; Water pollution; Wells; Semiconductor quantum wellsconference paper10.1117/12.8006582-s2.0-55549135353