Evaluation of Sub-0.2 V High-Speed Low-Power Circuits Using Hetero-Channel MOSFET and Tunneling FET Devices

Y.-N. ChenM.-L. FanV. P.-H. HuPin SuC.-T. ChuangVITA PI-HO HUY.-N. ChenM.-L. FanV. P.-H. HuPin SuC.-T. Chuang胡璧合2020-10-072020-10-072014https://scholars.lib.ntu.edu.tw/handle/123456789/516594Evaluation of Sub-0.2 V High-Speed Low-Power Circuits Using Hetero-Channel MOSFET and Tunneling FET Devicesjournal article10.1109/tcsi.2014.23350322-s2.0-84913600824