Lin, S.-Y.S.-Y.LinChi, J.-Y.J.-Y.ChiSI-CHEN LEE2020-06-112020-06-112005https://scholars.lib.ntu.edu.tw/handle/123456789/498728Ten-stacked InAs/GaAs quantum-dot infrared photodetector with two Al0.1Ga0.9As blocking layers at both sides of the structure is investigated. High responsivity 1.73 A/W under low applied voltage of -1.4 V is observed at 20 K with peak wavelength ∼7.6 μm. The appearance of 3-6 μm photovoltaic response at higher temperature is attributed to the enhancement of E1-E2 and E2-tunneling transition with increasing temperature. Higher photocurrent avalanche process under negative bias is due to the front blocking layer barrier lowering which results from strain-induced dislocations. © 2005 Published by Elsevier B.V.B3. Infrared devices[SDGs]SDG7Current voltage characteristics; Electric potential; Electron transitions; Electron tunneling; High temperature operations; Photovoltaic cells; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconducting indium compounds; Semiconductor quantum dots; Photovoltaic response; Quantum-dot infrared photodetectors (QDIP); Quantum-dot structures; Strain-induced dislocations; Infrared detectorsconference paper10.1016/j.jcrysgro.2005.01.0252-s2.0-18444403166https://www.scopus.com/inward/record.uri?eid=2-s2.0-18444403166&doi=10.1016%2fj.jcrysgro.2005.01.025&partnerID=40&md5=2275a26756ce80036146c5468f158366