Reliable C-V Characterization of MOS Capacitors by Initial Treatment at the Presence of Slow Interface States

胡振國Lin, J. J.J. J.Lin王維新Hwu, Jenn-GwoJenn-GwoHwuWang, Way-SeenWay-SeenWang2009-02-242018-07-052009-02-242018-07-051989http://ntur.lib.ntu.edu.tw//handle/246246/140562en-USReliable C-V Characterization of MOS Capacitors by Initial Treatment at the Presence of Slow Interface Statesconference paper