Zhenyang XiaHaomin SongMunho KimMing Zhou,Ming ZhouDong LiuXin YinKanglin XiongHongyi MiXudong WangFengnian XiaZongfu YuZhenqiang Jack MaQiaoqiang GanTZU-HSUAN CHANG2019-10-312019-10-31201723752548https://scholars.lib.ntu.edu.tw/handle/123456789/429179https://www.scopus.com/inward/record.uri?eid=2-s2.0-85043343508&doi=10.1126%2fsciadv.1602783&partnerID=40&md5=afc74f6ef51904dc9ec7d2d002b7fbffMiniaturization of optoelectronic devices offers tremendous performance gain. As the volume of photoactive material decreases, optoelectronic performance improves, including the operation speed, the signal-to-noise ratio, and the internal quantum efficiency. Over the past decades, researchers have managed to reduce the volume of photoactive materials in solar cells and photodetectors by orders of magnitude. However, two issues arise when one continues to thin down the photoactive layers to the nanometer scale (for example, <50 nm). First, light-matter interaction becomes weak, resulting in incomplete photon absorption and low quantum efficiency. Second, it is difficult to obtain ultrathin materials with single-crystalline quality. We introduce a method to overcome these two challenges simultaneously. It uses conventional bulk semiconductor wafers, such as Si, Ge, and GaAs, to realize single-crystalline films on foreign substrates that are designed for enhanced light-matter interaction. We use a high-yield and high-throughput method to demonstrate nanometer-thin photodetectors with significantly enhanced light absorption based on nanocavity interference mechanism. These single-crystalline nanomembrane photodetectors also exhibit unique optoelectronic properties, such as the strong field effect and spectral selectivity. Copyright © 2017 The Authors, some rights reserved.Crystalline materials; Efficiency; Electromagnetic wave absorption; Gallium arsenide; Germanium; III-V semiconductors; Light absorption; Nanostructures; Optoelectronic devices; Photodetectors; Photons; Semiconducting gallium arsenide; Semiconducting silicon; Signal to noise ratio; Silicon wafers; Substrates; Enhanced light absorptions; High-throughput method; Interference mechanisms; Internal quantum efficiency; Light-matter interactions; Optoelectronic properties; Single crystalline quality; Single-crystalline film; Quantum efficiencyjournal article10.1126/sciadv.1602783286952022-s2.0-85043343508