2017-07-012024-05-17https://scholars.lib.ntu.edu.tw/handle/123456789/681953摘要：新穎材料中介面 (interface) 的電子及自旋傳輸，常具有與塊材 (bulk) 迥異之特性。藉由搭配不同的二維材料 (2D) 與磁性材料 (FM)，我們可以利用電流通過 2D/FM 介面時所形成的 Rashba effect，來產生遠比電流磁效應要大的等效磁場，稱作 Rashba field。近年來亦有許多研究指出，過渡金屬材料異質結構中的介面 Rashba effect 可以產生巨大的自旋軌道矩 (spin-orbit torques)，足以控制磁性材料層中的磁矩翻轉，對自旋電子元件開發影響甚鉅。本子計畫將可藉由諸多電子與自旋傳輸量測之結果，了解二維暨層狀結構中電子傳輸的物理機制。<br> Abstract: The electronic and spintronic transport properties at the interface of emergent materials systems are drastically different from that of the bulk. With different combinations of 2D materials / ferromagnetic metal heterostructures, one could possibly generate large Rashba effective field by flowing charge current along the 2D/FM interface. Recently, it has also been reported that the large Rashba effect therein can further induce significant spin-orbit torques. In this project, we would like to explore spin transport properties in various 2D/FM heterostructures and to develop potential spin-orbitronics devices.二維材料異質介面自旋電子自旋軌道矩2D materialsheterostructurespintronicsspin-orbit torque