Comparison of photoluminescence properties between MBE and MOCVD grown InGaN/GaN multiple quantum well structures

CHIH-CHUNG YANG2018-09-102018-09-102002http://www.scopus.com/inward/record.url?eid=2-s2.0-0036571866&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/297187Comparison of photoluminescence properties between MBE and MOCVD grown InGaN/GaN multiple quantum well structuresjournal article