CHIH-CHUNG YANGLin, Y.-S.Y.-S.LinMa, K.-J.K.-J.MaHsu, C.C.HsuFeng, S.-W.S.-W.FengCheng, Y.-C.Y.-C.ChengLiao, C.-C.C.-C.LiaoYang, C.C.C.C.YangChou, C.-C.C.-C.ChouLee, C.-M.C.-M.LeeChyi, J.-I.J.-I.ChyiCHIH-CHUNG YANG2018-09-102018-09-102000http://www.scopus.com/inward/record.url?eid=2-s2.0-0000556986&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/289108The information on the variations of indium composition, aggregation size, and quantum-well width is crucially important for understanding the optical properties and, hence, fabricating efficient light-emitting devices. Our results showed that spinodal decomposition could occur in InGaN/GaN multiple quantum wells with indium content in the range of 15%–25% (grown with metal–organic chemical-vapor deposition). A lower nominal indium content led to a better confinement of indium-rich clusters within InGaN quantum wells. The InGaN/GaN interfaces became more diffusive, and indium-rich aggregates extended into GaN barriers with increasing indium content. It was also observed that indium-rich precipitates with diameter ranging from 5 to 12 nm preferred aggregating near V-shaped defects.journal article10.1063/1.1323542