Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

CHIH-CHUNG YANGLin, Y.-S.Y.-S.LinMa, K.-J.K.-J.MaHsu, C.C.HsuFeng, S.-W.S.-W.FengCheng, Y.-C.Y.-C.ChengLiao, C.-C.C.-C.LiaoYang, C.C.C.C.YangChou, C.-C.C.-C.ChouLee, C.-M.C.-M.LeeChyi, J.-I.J.-I.ChyiCHIH-CHUNG YANG2018-09-102018-09-102000http://www.scopus.com/inward/record.url?eid=2-s2.0-0000556986&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/289108Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wellsjournal article10.1063/1.1323542