GONG-RU LIN2020-06-112020-06-112007https://www.scopus.com/inward/record.uri?eid=2-s2.0-34548048150&doi=10.1063%2f1.2769962&partnerID=40&md5=ef2ef0dbee61c50e7b663816df0fee35Structural damage enhanced near-infrared electroluminescence (EL) of a metal-oxide-semiconductor light emitting diode (MOSLED) made on Si Ox film with buried nanocrystallite Si after C O2 laser rapid thermal annealing (RTA) at an optimized intensity of 6 kW cm2 for 1 ms is demonstrated. C O2 laser RTA induced oxygen-related defects are capable of improving Fowler-Nordheim tunneling mechanism of carriers at metal/ Si Ox interface. The C O2 laser RTA Si Ox film reduces Fowler-Nordheim tunneling threshold to 1.8 MVcm, facilitating an enhanced EL power of an indium tin oxide/ Si Ox p-SiAl MOSLED up to 50 nW at a current density of 2.3 mA cm2. © 2007 American Institute of Physics.Carbon dioxide lasers; Current density; Electroluminescence; MOS devices; Rapid thermal annealing; Fowler-Nordheim tunneling; Tunneling threshold; Light emitting diodesjournal article10.1063/1.27699622-s2.0-34548048150