Fu, Zi-HaoZi-HaoFuLi, Ming-XuanMing-XuanLiMa, Tzyh-GhuangTzyh-GhuangMaWu, Chan-ShinChan-ShinWuLin, Kun-YouKun-YouLin2025-12-032025-12-032024-03https://scholars.lib.ntu.edu.tw/handle/123456789/734287This paper presents an ultra-wideband (UWB) medium power amplifier (MPA) and a broadband high-power power amplifier (HPA) operating at the 5G/6G frequency bands. By using 0.15~\mu \text{m} GaAs pseudomorphic high electron mobility transistor (pHEMT) technology process, the proposed UWB MPA delivers an average small-signal gain of 16.5 dB, a saturation output power (\text{P}_{\mathrm {sat}} ) of 24 dBm, and a peak power-added efficiency (PAE) over 24% from 24 to 38 GHz with a chip area of 2\times1 mm2. The broadband HPA demonstrates a 17-dB average small-signal gain, 29-dBm \text{P}_{\mathrm {sat}} , and a PAE over 28% from 24 to 32 GHz with a 2.4\times1.1 mm2 chip size. The measurement results have demonstrated the great potential of the proposed PA for 5G/6G millimeter-wave applications.5G6GbroadbandGaAs pHEMTPower amplifierultra-widebandjournal article2-s2.0-85182939854