Fabrication of sub-60-nm contact holes in silicon dioxide layers

Ko, F.-H.F.-H.KoYou, H.-C.H.-C.YouChu, T.-C.T.-C.ChuLei, T.-F.T.-F.LeiHsu, C.-C.C.-C.HsuChen, H.-L.H.-L.ChenHSUEN-LI CHEN2020-05-122020-05-122004https://scholars.lib.ntu.edu.tw/handle/123456789/491364Fabrication of sub-60-nm contact holes in silicon dioxide layersconference paper10.1016/S0167-9317(04)00119-42-s2.0-17344379482https://www.scopus.com/inward/record.uri?eid=2-s2.0-17344379482&doi=10.1016%2fS0167-9317%2804%2900119-4&partnerID=40&md5=a58a3586078ee78ac4e057981570203f